to ? 92 1.emitter 2.base 3.collector to-92 plastic-encapsulate transistors MPSA13 transistor (npn) features z darlington transistors maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 10 v collector cut-off current i cbo v cb =30v,i e =0 0.1 a emitter cut-off current i ebo v eb =10v,i c =0 0.1 a h fe(1) * v ce =5v, i c =10ma 5000 dc current gain h fe(2) * v ce =5v, i c =100ma 10000 collector-emitter saturation voltage v ce(sat) * i c =100ma,i b =0.1ma 1.5 v base-emitter voltage v be * v ce =5v,i c =100ma 2.0 v current gain-bandwidth product f t v ce =5v,i c =10ma,f=100mhz 125 mhz *pulse test: pulse width 300 s, duty cycle 2.0%. symbol parameter value units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 10 v i c collector current 0.5 a p c collector power dissipation 625 mw r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,dec,2012
01234567 0 20 40 60 80 0 25 50 75 100 125 150 0 125 250 375 500 625 750 10 100 10 100 1 10 100 500 1000 1500 2000 110100 0.1 1 10 1 10 1 10 100 400 600 800 1000 0.0 0.4 0.8 1.2 1.6 2.0 1 10 100 common emitter t a =25 3.0ua 2.7ua 2.4ua 2.1ua 1.8ua 1.5ua 1.2ua 0.9ua 0.6ua i b = 0.3ua collector current i c (ma) collector-emitter voltage v ce (v) static characteristic ambient temperature t a ( ) collector power dissipation p c (mw) p c ?? t a 3 common emitter v ce =5v t a =25 collector current i c (ma) transition frequency f t (mhz) 300 i c i c 500 f t ?? =1000 i c v besat ?? t a =25 t a =100 base-emitter saturation voltage v besat (mv) collector current i c (ma) 100k 10k 1k common emitter v ce =5v 500 t a =100 t a =25 collector current i c (ma) dc current gain h fe f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? capacitance c t (pf) reverse voltage v (v) c ib c ob 20 20 500 MPSA13 h fe ?? =1000 i c v cesat ?? t a =100 t a =25 collector current i c (ma) collector-emitter saturation voltage v cesat (mv) common emitter v ce =5v collector current i c (ma) t a = 2 5 t a = 1 0 0 base-emmiter voltage v be (v) 500 i c ?? v be 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,dec,2012
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